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D. Dutta et al.
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T. Umeda et al.
APPLIED PHYSICS LETTERS (2018)
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Yu-ichiro Matsushita et al.
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H. Li et al.
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Ultrahigh-temperature rapid thermal oxidation of 4H-SiC(0001) surfaces and oxidation temperature dependence of SiO2/SiC interface properties
Takuji Hosoi et al.
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Toru Akiyama et al.
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Richard Heihachiro Kikuchi et al.
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Heiji Watanabe et al.
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Fabien Devynck et al.
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Xingguang Zhu et al.
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Screened exchange density functional applied to solids
Stewart J. Clark et al.
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Peter Deak et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2007)
Fermi level pinning by defects in HfO2-metal gate stacks
J. Robertson et al.
APPLIED PHYSICS LETTERS (2007)
Hybrid functionals based on a screened Coulomb potential (vol 118, pg 8207, 2003)
Jochen Heyd et al.
JOURNAL OF CHEMICAL PHYSICS (2006)
First principles methods using CASTEP
SJ Clark et al.
ZEITSCHRIFT FUR KRISTALLOGRAPHIE (2005)
Graphitic features on SiC surface following oxidation and etching using surface enhanced Raman spectroscopy
WJ Lu et al.
APPLIED PHYSICS LETTERS (2004)
Modified Deal Grove model for the thermal oxidation of silicon carbide
Y Song et al.
JOURNAL OF APPLIED PHYSICS (2004)
Resonant Raman spectroscopy of disordered, amorphous, and diamondlike carbon
AC Ferrari et al.
PHYSICAL REVIEW B (2001)
Interface trap profile near the band edges at the 4H-SiC/SiO2 interface
NS Saks et al.
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