4.8 Article

Designing the Bending Stiffness of 2D Material Heterostructures

期刊

ADVANCED MATERIALS
卷 33, 期 9, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202007269

关键词

2D heterostructures; bending mechanics; deformable materials; electron microscopy; interfacial engineering

资金

  1. NSF-MRSEC [DMR-1720633]
  2. NSF through the University of Illinois Materials Research Science and Engineering Center [DMR-1720633]
  3. Elemental Strategy Initiative by the MEXT, Japan [JPMXP0112101001]
  4. JSPS KAKENHI [JP20H00354]
  5. JST CREST [JPMJCR15F3]

向作者/读者索取更多资源

By introducing low-friction twisted or heterointerfaces, the bending stiffness of 2D heterostructures can be tailored, making them more deformable than conventional thin-film electronic devices. Research shows that when each atomic layer is separated by heterointerfaces, the total bending stiffness reaches a theoretical minimum, transferring the extreme deformability of 2D monolayers to device-compatible multilayers.
2D monolayers represent some of the most deformable inorganic materials, with bending stiffnesses approaching those of lipid bilayers. Achieving 2D heterostructures with similar properties would enable a new class of deformable devices orders of magnitude softer than conventional thin-film electronics. Here, by systematically introducing low-friction twisted or heterointerfaces, interfacial engineering is leveraged to tailor the bending stiffness of 2D heterostructures over several hundred percent. A bending model is developed and experimentally validated to predict and design the deformability of 2D heterostructures and how it evolves with the composition of the stack, the atomic arrangements at the interfaces, and the geometry of the structure. Notably, when each atomic layer is separated by heterointerfaces, the total bending stiffness reaches a theoretical minimum, equal to the sum of the constituent layers regardless of scale of deformation-lending the extreme deformability of 2D monolayers to device-compatible multilayers.

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