4.8 Article

Indium Nitride at the 2D Limit

期刊

ADVANCED MATERIALS
卷 33, 期 1, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202006660

关键词

2D semiconductors; epitaxial graphene; indium nitride; metal– organic chemical vapor deposition; SiC substrates; wide‐ bandgap materials

资金

  1. FLAG-ERA 2015 JTC project GRIFONE through Swedish Research Council [VR 2015-06816]
  2. National Research Development and Innovation Office, Hungary NN [118914]
  3. FLAG-ERA 2015 JTC project GRIFONE through Swedish Research Council VR [2015-06816]
  4. National Research Development and Innovation Office, Hungary [NN 118914]
  5. Italian Ministry of Education and Research (MIUR) under project Beyond-Nano [PON a3_00363]
  6. Italian Ministry of Education and Research (MIUR) [PON ARS01_01007]
  7. European Structural and Investment Funds [VEKOP-2.3.3-15-2016-00002]
  8. European Union's Horizon 2020 research and innovation programme [823717 - ESTEEM3]
  9. [VR 2017-04071]
  10. [KAW 2013.0049]
  11. Swedish Research Council [2015-06816] Funding Source: Swedish Research Council

向作者/读者索取更多资源

This study successfully demonstrates the formation of 2D InN and measures its bandgap, showing a wide bandgap and high lateral uniformity of intercalation.
The properties of 2D InN are predicted to substantially differ from the bulk crystal. The predicted appealing properties relate to strong in- and out-of-plane excitons, high electron mobility, efficient strain engineering of their electronic and optical properties, and strong application potential in gas sensing. Until now, the realization of 2D InN remained elusive. In this work, the formation of 2D InN and measurements of its bandgap are reported. Bilayer InN is formed between graphene and SiC by an intercalation process in metal-organic chemical vapor deposition (MOCVD). The thickness uniformity of the intercalated structure is investigated by conductive atomic force microscopy (C-AFM) and the structural properties by atomic resolution transmission electron microscopy (TEM). The coverage of the SiC surface is very high, above 90%, and a major part of the intercalated structure is represented by two sub-layers of indium (In) bonded to nitrogen (N). Scanning tunneling spectroscopy (STS) measurements give a bandgap value of 2 +/- 0.1 eV for the 2D InN. The stabilization of 2D InN with a pragmatic wide bandgap and high lateral uniformity of intercalation is demonstrated.

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