期刊
ADVANCED FUNCTIONAL MATERIALS
卷 31, 期 8, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.202008351
关键词
Bi2O2Se; p‐ n diode; self‐ driven photodetection; Van der Waals heterostructure; WSe2
类别
资金
- National Natural Science Foundation of China [21825103, 51727809]
- Hubei Provincial Natural Science Foundation of China [2019CFA002]
- State Key Laboratory of Luminescence and Applications [SKLA-2020-02]
- Fundamental Research Funds for the Central Universities [2019kfyXMBZ018]
- Analytical and Testing Center in Huazhong University of Science and Technology
This study reports a WSe2/Bi2O2Se Van der Waals p-n heterostructure with superior performance in photodetection, showing promising potentials for high-performance self-driven photodetector applications.
Benefiting from the superior electron mobility and good air-stability, the emerging layered bismuth oxyselenide (Bi2O2Se) nanosheet has received considerable attention with the promising prospects for electronics and optoelectronics applications. However, the high charge carrier concentration and bolometric effect of Bi2O2Se give rise to the high dark current and relatively slow photoresponse, which severely impede further improvement of the performance of Bi2O2Se based photodetectors. Here, a WSe2/Bi2O2Se Van der Waals p-n heterostructure is reported with a pronounced rectification ratio of 10(5) and a low reverse dark current of 10(-11) A, as well as an enhanced light on/off ratio up to 618 under 532 nm light illumination. The device also exhibits a fast response speed of 2.6 mu s and a broadband detection capability from 365 to 2000 nm due to the efficient charge separation and strong interlayer coupling at the interface of the two flakes. Importantly, the built-in potential in the WSe2/Bi2O2Se heterostructure offers a competitive self-powered photodetector with the light on/off ratio above 10(5) and a photovoltaic responsivity of 284 mA W-1. The WSe2/Bi2O2Se heterostructure shows promising potentials for high-performance self-driven photodetector applications.
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