期刊
ADVANCED FUNCTIONAL MATERIALS
卷 31, 期 11, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.202008453
关键词
alloyed; inorganic ligands; InP quantum dots; quantum dot color; enhancement films; quantum dot light-emitting diode
类别
资金
- National Key Research and Development Program of China [2016YFB0401702, 2017YFE0120400]
- National Natural Science Foundation of China [61674074, 61875082, 61405089]
- Key-Area Research and Development Program of Guang Dong Province [2019B010924001]
- High-Level University Fund of Guangdong Province [G02236001, G02236402, G02236004]
- Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting [2017KSYS007]
- Distinguished Young Scholar of Natural Science Foundation of Guangdong [2017B030306010]
- Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting [ZDSYS201707281632549]
- Shenzhen Peacock Team Project [KQTD2016030111203005]
InP quantum dots with engineered core-shell structures achieved high PLQY and narrow emission spectra, setting a record for PLQY. The residue halogen atoms as inorganic ligands on the QD surface prevent further oxidation, leading to ultra-long operational lifetimes for the InP QDs.
InP quantum dots (QDs) are emerging as promising materials for replacing cadmium-based QDs in view of their heavy metal-free and tunable luminescence. However, the development of InP QD materials still lags due to the expensive and flammable phosphorus precursors, and also the unsatisfactory repeatability caused by the fast nucleation rate. Adopting lowly reactive P precursor aminophosphine can overcome this issue, but their low photoluminescence quantum yield (PLQY) and widening line widths do not apply to the practical application. Through engineering, the core-shell structure of QD, significantly promoted green emissions of QDs were obtained with PLQY of 95% and full width and half maximum (FWHM) of 45 nm, which demonstrated the highest PLQY record obtained from the aminophosphine system. Moreover, due to the residue halogen atoms on the QD surface as inorganic ligands to prevent further oxidization, these InP QDs demonstrated the ultra-long operational lifetime (over 1000 h) for QDs based color enhancement film. By optimizing the device structure, an inverted green InP quantum dot light-emitting diode (QLED) with external quantum efficiency (EQE) of 7.06% was also demonstrated, which showed a significant promise of these InP QDs in highly effective optoelectronic devices.
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