期刊
ACS NANO
卷 15, 期 1, 页码 819-828出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.0c07350
关键词
transition-metal dichalcogenides; TMD/metal interface; hot carriers; time-resolved photoemission electron microscopy; ultrajast spectroscopy
类别
资金
- A*STAR Advanced Optics in Engineering Program [122 360 0008]
- Ministry of Education [MOE2018-T2-1-081, RG109/18]
- National Natural Science Foundation of China [21973006]
- EU
- ERC
- EPSRC [EP/L0160871/1, EP/K01711X/1, EP/K017144/1]
- U.S. National Science Foundation [CHE-1900510]
The study investigates the hot-electron transfer dynamics at the 1L MoS2/Au interface using TR-PEEM and atomic force microscopy, revealing an exponential decay of electron transfer rates with a decay coefficient of about 0.06 angstrom(-1). Ab initio simulations suggest that surface plasmon-like states mediate hot-electron transfer and explain its weak distance dependence.
Electron transport across the transition-metal dichalcogenide (TMD)/metal interface plays an important role in determining the performance of TMD-based optoelectronic devices. However, the robustness of this process against structural heterogeneities remains unexplored, to the best of our knowledge. Here, we employ a combination of time-resolved photoemission electron microscopy (TR-PEEM) and atomic force microscopy to investigate the spatially resolved hot-electron-transfer dynamics at the monolayer (1L) MoS2/Au interface. A spatially heterogeneous distribution of 1L-MoS2/Au gap distances, along with the sub-80 nm spatial- and sub-60 fs temporal resolution of TR-PEEM, permits the simultaneous measurement of electron-transfer rates across a range of 1L-MoS2/Au distances. These decay exponentially as a function of distance, with an attenuation coefficient beta similar to 0.06 +/- 0.01 angstrom(-1), comparable to molecular wires. Ab initio simulations suggest that surface plasmon-like states mediate hot-electron-transfer, hence accounting for its weak distance dependence. The weak distance dependence of the interfacial hot-electron-transfer rate indicates that this process is insensitive to distance fluctuations at the TMD/metal interface, thus motivating further exploration of optoelectronic devices based on hot carriers.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据