期刊
ACS NANO
卷 15, 期 1, 页码 1701-1709出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.0c09357
关键词
black As; narrow-gap semiconductor; crystalline orientation; in-plane anisotropy; electric transport
类别
资金
- National Natural Science Foundation of China [61904205, 61804050, 61874141]
- Natural Science Foundation of Hunan Provience of China [2020JJ4677]
- Strategic Priority Research Program of Chinese Academy of Sciences [XDB43000000]
- Beijing National Laboratory for Molecular Sciences [BNLMS201908]
- Open Sharing Fund for the Large-scale Instruments and Equipment of Central South University
- Pearl River Talent Recruitment Program [2019ZT08X639]
This study systematically investigates the in-plane anisotropic properties of few-layered b-As, a narrow-gap semiconductor, and proposes a simple method for identifying crystal orientations. The research also reveals that the maximum mobility of electrons and holes is measured in the in-plane armchair direction.
Low-symmetry two-dimensional (2D) semiconductors have attracted great attention because of their rich in-plane anisotropic optical, electrical, and thermoelectric properties and potential applications in multifunctional nanoelectronic and optoelectronic devices. However, anisotropic 2D semiconductors with high performance are still very limited. Here, we report the systematic study of in-plane anisotropic properties in few-layered b-As that is a narrow-gap semiconductor, based on the experimental and theoretical investigations. According to experimental results, we have come up with a simple method for identifying the orientation of b-As crystals. Meanwhile, we show that the maximum mobility of electrons and holes was measured in the in-plane armchair (AC) direction. The measured maximum electron mobility ratio is about 2.68, and the hole mobility ratio is about 1.79.
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