期刊
ACS NANO
卷 15, 期 3, 页码 4045-4053出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.0c06791
关键词
transparent conductive oxide; nonlayered; transparent electronics; liquid metal printing; optical transmittance
类别
资金
- Australian Research Council [DE160100715, DP180102752, CE170100039]
This research explores the use of transition metal doping in ultrathin In2O3, achieving thickness down to the single-unit-cell limit using low-temperature liquid metal printing. By optimizing Zn doping levels, the material retains high optical transparency, while achieving significantly improved electron field-effect mobility and electrical conductivity.
Ultrathin transparent conductive oxides (TCOs) are emerging candidates for next-generation transparent electronics. Indium oxide (In2O3) incorporated with post-transition-metal ions (e.g., Sn) has been widely studied due to their excellent optical transparency and electrical conductivity. However, their electron transport properties are deteriorated at the ultrathin two-dimensional (2D) morphology compared to that of intrinsic In2O3. Here, we explore the domain of transition-metal dopants in ultrathin In2O3 with the thicknesses down to the single-unit-cell limit, which is realized in a large area using a low-temperature liquid metal printing technique. Zn dopant is selected as a representative to incorporate into the In2O3 rhombohedral crystal framework, which results in the gradual transition of the host to quasimetallic. While the optical transmittance is maintained above 98%, an electron field-effect mobility of up to 87 cm(2) V-1 s(-1) and a considerable sub-k Omega(-1) cm(-1) ranged electrical conductivity are achieved when the Zn doping level is optimized, which are in a combination significantly improved compared to those of reported ultrathin TCOs. This work presents various opportunities for developing high-performance flexible transparent electronics based on emerging ultrathin TCO candidates.
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