4.8 Article

Room-Temperature Antiferroelectricity in Multiferroic Hexagonal Rare-Earth Ferrites

期刊

ACS APPLIED MATERIALS & INTERFACES
卷 13, 期 3, 页码 4230-4235

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsami.0c20924

关键词

multiferroic; ferroelectric; iron oxides; pulsed laser deposition; antiferroelectric; thin films

资金

  1. JSPS KAKENHI [20H02614]

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By preparing h-DyFeO3 films through epitaxial stabilization, the research team successfully expanded the AFE temperature range to 10-300K. The AFE phase originates from a nanomosaic structure comprising AFE P(3)over bar c1 - and ferroelectric P6(3)cm domains with small domain sizes of 1-10 nm, and weak ferromagnetism and magnetocapacitance behaviors are observed.
The antiferroelectric (AFE) phase, in which nonpolar and polar states are switchable by an electric field, is a recent discovery in promising multiferroics of hexagonal rare-earth manganites (ferrites), h-RMn(Fe)O-3. However, this phase has so far only been observed at 60-160 K, which restricts key investigations into the microstructures and magnetoelectric behaviors. Herein, we report the successful expansion of the AFE temperature range (10-300 K) by preparing h-DyFeO3 films through epitaxial stabilization. Room-temperature scanning transmission electron microscopy reveals that the AFE phase originates from a nanomosaic structure comprising AFE P (3) over bar c1 - and ferroelectric P6(3)cm domains with small domain sizes of 1-10 nm. The nanomosaic structure is stabilized by a low c/a ratio derived from the large ionic radius of Dy3(+). Furthermore, weak ferromagnetism and magnetocapacitance behaviors are observed. Below 10 K, the film exhibits an M-shaped magnetocapacitance versus magnetic field curve, indicating unusual magnetoelectric coupling in the AFE phase.

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