4.8 Article

Ti3C2-Based MXene Oxide Nanosheets for Resistive Memory and Synaptic Learning Applications

期刊

ACS APPLIED MATERIALS & INTERFACES
卷 13, 期 4, 页码 5216-5227

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsami.0c19028

关键词

Ti3C2 MXene; 2D nanomaterial; resistive switching; memristive effect; synaptic learning

资金

  1. National Research Foundation of Korea (NRF) - Korea Government [2016R1A3B 1908249]
  2. Samsung Semiconductor Research Center in Korea University

向作者/读者索取更多资源

MXene, a novel 2D nanomaterial with excellent electrical, mechanical, and chemical properties, shows promising potential in digital and analog computing applications, especially in bipolar resistive switching and synaptic learning devices. The study explored Ti3C2 MXene and investigated its structural, compositional, and morphological properties, as well as the impact of different top electrodes on device performance. The results indicate that MXene is a promising nanomaterial for non-volatile memory and synaptic learning applications.
MXene, a new state-of-the-art two-dimensional (2D) nanomaterial, has attracted considerable interest from both industry and academia because of its excellent electrical, mechanical, and chemical properties. However, MXene-based device engineering has rarely been reported. In this study, we explored Ti3C2 MXene for digital and analog computing applications by engineering the top electrode. For this purpose, Ti3C2 MXene was synthesized by a simple chemical process, and its structural, compositional, and morphological properties were studied using various analytical tools. Finally, we explored its potential application in bipolar resistive switching (RS) and synaptic learning devices. In particular, the effect of the top electrode (Ag, Pt, and Al) on the RS properties of the Ti3C2 MXene-based memory devices was thoroughly investigated. Compared with the Ag and Pt top electrode-based devices, the Al/Ti3C2/Pt device exhibited better RS and operated more reliably, as determined by the evaluation of the charge-magnetic property and memory endurance and retention. Thus, we selected the Al/Ti3C2/Pt memristive device to mimic the potentiation and depression synaptic properties and spike-timing-dependent plasticity-based Hebbian learning rules. Furthermore, the electron transport in this device was found to occur by a filamentary RS mechanism (based on oxidized Ti3C2 MXene), as determined by analyzing the electrical fitting curves. The results suggest that the 2D Ti3C2 MXene is an excellent nanomaterial for non-volatile memory and synaptic learning applications.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据