期刊
ACS APPLIED MATERIALS & INTERFACES
卷 12, 期 52, 页码 57888-57897出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.0c17462
关键词
Mg2Sn; single crystal; point defect; Mg vacancy; Sb doping; nanostructure; thermoelectric properties
资金
- Ministry of Education, Culture, Sports, Science [17H03398, 17H05207, 20J10512]
- Technology of Japan
- Tsinghua-Tohoku Collaborative Research Fund
- Grants-in-Aid for Scientific Research [17H05207, 17H03398, 20J10512] Funding Source: KAKEN
Mg2Sn is a potential thermoelectric (TE) material that exhibits environmental compatibility. In this study, we fabricated Sb-doped Mg2Sn (Mg2Sn1-xSbx) single-crystal ingots and demonstrated the enhancement of TE performance via point defect engineering and Sb doping. The Mg2Sn1-xSbx single-crystal ingots exhibited considerably enhanced electrical conductivity because of the donor-doping effect in addition to high carrier mobility. Moreover, the Mg2Sn1-xSbx single-crystal ingots contained Mg vacancy (V-Mg) as a point defect. The introduced V-Mg and doped Sb atoms formed nanostructures, both acting as phonon-scattering centers. Consequently, lower lattice thermal conductivity was achieved for the Mg2Sn1-xSbx single-crystal ingots compared with polycrystalline counterparts. Owing to the significant enhancement in the electrical conductivity and the reduction in the lattice thermal conductivity, the maximum power factor of 5.1(4) x 10(-3) W/(K-2 m) and the maximum dimensionless figure of merit of 0.72(5) were achieved for the Mg2Sn0.99Sb0.01 single-crystal ingot, which are higher than those of single-phase Mg2Sn1-xSb polycrystals.
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