期刊
ACS APPLIED MATERIALS & INTERFACES
卷 13, 期 2, 页码 3062-3069出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.0c20694
关键词
SiC; nanowires; field emission; turn-on field; stability
资金
- National Natural Science Foundation of China (NSFC) [51702174, 51702175, 51672137]
- Natural Science Foundation of Ningbo Municipal Government [2019A610049]
This study introduces a high-performance field emitter with designed sharp corners, achieving a low E-to of 0.52 V/μm and a current fluctuation of only 2% over 10 hours. This design enhances electron emission sites and prevents damage during long-term operation.
Making field emitters with both low turn-on field (E-to) and high current emission stability is one of the keys to push forward their practical applications. In the present work, we report the exploration of high-performance field emitters with designed sharp corners around SiC nanowires for fundamentally enhanced electron emission sites. The sharp corners with tailored densities are rationally created based on a facile etching technique. Accordingly, the emission sites and nanowires are integrated into a single-crystalline configuration without interfaces, which could offer the emitters with a robust structure to avoid the structural damage induced by the generated Joule heat and electrostatic forces over long-term field emission (FE) operation. Consequently, the E-to of the as-fabricated SiC field emitter is low down to 0.52 V/mu m, which is comparable to the state-of-the-art one ever reported. Moreover, they have high electron emission stability with a current fluctuation of just 2% over 10 h, representing their promising applications in FE-based electronic units.
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