Band-Gap Tuning in All-Inorganic CsPbxSn1-xBr3 Perovskites

We investigate all-inorganic perovskite CsPbxSn1-xBr3 thin films to determine the variations in the band gap and electronic structure associated with the Pb/Sn ratio. We observe that the band gap can be tuned between 1.86 eV (x = 0) and 2.37 eV (x = 1). Intriguingly, this change is nonlinear in x, with a bowing parameter of 0.9 eV; furthermore, a slight band gap narrowing is found for low Pb content (minimum x similar to 0.3). The wide tunability of the band gap makes CsPbxSn1-xBrx a promising material, e.g., for a wide-gap subcell in tandem applications or for color-tunable light-emitting diodes. Employing photoelectron spectroscopy, we show that the valence band varies with the Pb/Sn ratio, while the conduction band is barely affected.

Automated summary

The band gap of CsPbxSn1-xBrx thin films can be tuned between 1.86 eV and 2.37 eV and the variation is nonlinear with the Pb/Sn ratio. A slight band gap narrowing is found for low Pb content. Valence band varies with the Pb/Sn ratio, while the conduction band is barely affected.