4.8 Article

Defect Engineering for Tuning the Photoresponse of Ceria-Based Solid Oxide Photoelectrochemical Cells

期刊

ACS APPLIED MATERIALS & INTERFACES
卷 13, 期 1, 页码 541-551

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsami.0c17921

关键词

solid oxide photoelectrochemical cell; defect chemistry engineering; doped ceria; thin films; solar-to-chemical energy conversion

资金

  1. ShanghaiTech University
  2. Analytical Instrumentation Center of ShanghaiTech University
  3. Shanghai Key Research Program [20ZR1436700]

向作者/读者索取更多资源

Solid oxide photoelectrochemical cells with inorganic ion-conducting electrolytes offer an alternative solution for light harvesting and conversion. Ceria-based thin films were investigated as photoelectrodes for SOPEC applications, with their photoresponse tuned by Sm-doping induced defects and SOPEC heating temperature. The role of defect chemistry engineering in determining the photoelectrochemical process was discussed, providing a compelling explanation of the experimentally observed switching behavior.
Solid oxide photoelectrochemical cells (SOPECs) with inorganic ion-conducting electrolytes provide an alternative solution for light harvesting and conversion. Exploring potential photoelectrodes for SOPECs and understanding their operation mechanisms are crucial for continuously developing this technology. Here, ceria-based thin films were newly explored as photoelectrodes for SOPEC applications. It was found that the photoresponse of ceria-based thin films can be tuned both by Smdoping-induced defects and by the heating temperature of SOPECs. The whole process was found to depend on the surface electrochemical redox reactions synergistically with the bulk photoelectric effect. Samarium doping level can selectively switch the open-circuit voltages polarity of SOPECs under illumination, thus shifting the potential of photoelectrodes and changing their photoresponse. The role of defect chemistry engineering in determining such a photoelectrochemical process was discussed. Transient absorption and X-ray photoemission spectroscopies, together with the state-of-the-art in operando X-ray absorption spectroscopy, allowed us to provide a compelling explanation of the experimentally observed switching behavior on the basis of the surface reactions and successive charge balance in the bulk.

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