期刊
ACS APPLIED MATERIALS & INTERFACES
卷 13, 期 1, 页码 1169-1177出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.0c17011
关键词
ruthenium; silicon nanowire; metal-assisted chemical etch; porosity; catalytic activity; CMOS-compatible
资金
- Cockrell School of Engineering
- Joe C. Walter Endowed Chair funds
- NSF [NNCI-1542159]
- National Science Foundation
This study introduces a new ruthenium MacEtch process that is comparable in quality to gold MacEtch, achieved through the introduction of new process variables - catalyst plasma pretreatment and surface area. Ruthenium is desirable for being CMOS-compatible and already introduced in semiconductor fabrication. This breakthrough paves the way for scalable fabrication of 3D semiconductor devices, sensors, and biodevices.
The semiconductor industry's transition to three-dimensional (3D) logic and memory devices has revealed the limitations of plasma etching in reliable creation of vertical high aspect ratio (HAR) nanostructures. Metal-assisted chemical etch (MacEtch) can create ultra-HAR, taper-free nanostructures in silicon, but the catalyst used for reliable MacEtch-gold-is not CMOS (complementary metal-oxide-semiconductor)-compatible and therefore cannot be used in the semiconductor industry. Here, for the first time, we report a ruthenium MacEtch process that is comparable in quality to gold MacEtch. We introduce new process variables-catalyst plasma pretreatment and surface area-to achieve this result. Ruthenium is particularly desirable as it is not only CMOS-compatible but has also been introduced in semiconductor fabrication as an interconnect material. The results presented here remove a significant barrier to adoption of MacEtch for scalable fabrication of 3D semiconductor devices, sensors, and biodevices that can benefit from production in CMOS foundries.
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