4.8 Article

Efficient light-emitting diodes from mixed-dimensional perovskites on a fluoride interface

期刊

NATURE ELECTRONICS
卷 3, 期 11, 页码 704-+

出版社

NATURE RESEARCH
DOI: 10.1038/s41928-020-00487-4

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资金

  1. National Key Research and Development Program of China [2018YFB2200401]
  2. National Natural Science Foundation of China (NSFC) [61975180, 51702289]
  3. Fundamental Research Funds for the Central Universities [2019QNA5005]
  4. Zhejiang University Education Foundation Global Partnership Fund
  5. EU [823717]
  6. Engineering and Physical Sciences Research Council (EPSRC) [EP/R025193/1]
  7. European Research Council (ERC) under the European Union's Horizon 2020 research and innovation programme (HYPERION) [756962]
  8. EPSRC Departmental Graduate Studentship
  9. Royal Society [UF150033]
  10. Tata Group [UF150033]
  11. EPSRC [EP/L011700/1, EP/N004272/1]
  12. Isaac Newton Trust [13.38(k)]
  13. China Scholarship Council
  14. Cambridge Commonwealth, European and International Trust
  15. ERC under the European Union's Horizon 2020 research and innovation programme [670405]
  16. EPSRC
  17. Attolight
  18. EPSRC [EP/N004272/1, EP/R025193/1, EP/L011700/1] Funding Source: UKRI

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Light-emitting diodes based on halide perovskites have recently reached external quantum efficiencies of over 20%. However, the performance of visible perovskite light-emitting diodes has been hindered by non-radiative recombination losses and limited options for charge-transport materials that are compatible with perovskite deposition. Here, we report efficient, green electroluminescence from mixed-dimensional perovskites deposited on a thin (similar to 1 nm) lithium fluoride layer on an organic semiconductor hole-transport layer. The highly polar dielectric interface acts as an effective template for forming high-quality bromide perovskites on otherwise incompatible hydrophobic charge-transport layers. The control of crystallinity and dimensionality of the perovskite layer is achieved by using tetraphenylphosphonium chloride as an additive, leading to external photoluminescence quantum efficiencies of around 65%. With this approach, we obtain light-emitting diodes with external quantum efficiencies of up to 19.1% at high brightness (>1,500 cd m(-2)).

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