期刊
ADVANCED ELECTRONIC MATERIALS
卷 7, 期 7, 页码 -出版社
WILEY
DOI: 10.1002/aelm.202000395
关键词
2D materials; gate last processing; high-kdielectrics; MoS2FETs; trap density
资金
- National Key Research and Development Program [2016YFA0203900]
- Shanghai Municipal Science and Technology Commission [18JC1410300]
- National Natural Science Foundation of China [51802041, 61904032, 61874154]
This study systematically investigates the channel doping effect caused by various processing steps based on mechanical exfoliated MoS(2) sheets, and provides a simple and efficient methodology to realize high-performance MoS(2) field effect transistors.
2D transition metal dichalcogenides (TMDs) are promising semiconductive films for applications in future devices due to their prosperous and tunable band structures. However, most TMD-based top gate transistors suffer from a significant doping effect in the channel due to the subsequent deposition high-kdielectric layer and metal gate, which limits their practical applications. In this work, the channel doping effect caused by various processing steps based on mechanical exfoliated MoS(2)sheets is systematically investigated. This work illustrates a clear correlation among these steps and provides a simple and efficient methodology to realize high-performance enhancement mode MoS(2)field effect transistors, which can be extended to other 2D materials.
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