相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。How 2D semiconductors could extend Moore’s law
Ming-Yang Li et al.
NATURE (2019)
Sub 10 nm Bilayer Bi2O2Se Transistors
Jie Yang et al.
ADVANCED ELECTRONIC MATERIALS (2019)
Excellent Device Performance of Sub-5-nm Monolayer Tellurene Transistors
Jiahuan Yan et al.
ADVANCED ELECTRONIC MATERIALS (2019)
Unusual Electronic Transitions in Two-dimensional Layered SnSb2Te4 Driven by Electronic State Rehybridization
Wenhan Zhou et al.
PHYSICAL REVIEW APPLIED (2019)
PbSe Quantum Dots Sensitized High-Mobility Bi2O2Se Nanosheets for High-Performance and Broadband Photodetection Beyond 2 μm
Peng Luo et al.
ACS NANO (2019)
2D V-V Binary Materials: Status and Challenges
Shiying Guo et al.
ADVANCED MATERIALS (2019)
Graphene and two-dimensional materials for silicon technology
Deji Akinwande et al.
NATURE (2019)
Large-Scale Growth and Field-Effect Transistors Electrical Engineering of Atomic-Layer SnS2
Liping Xu et al.
SMALL (2019)
Two-Dimensional Pnictogen for Field-Effect Transistors
Wenhan Zhou et al.
RESEARCH (2019)
First-Principles Prediction of a Room-Temperature Ferromagnetic Janus VSSe Monolayer with Piezoelectricity, Ferroelasticity, and Large Valley Polarization
Chunmei Zhang et al.
NANO LETTERS (2019)
Tunable Schottky barrier width and enormously enhanced photoresponsivity in Sb doped SnS2 monolayer
Junchi Liu et al.
NANO RESEARCH (2019)
A sub-10 nm monolayer ReS2 transistor for low-power applications
Ruge Quhe et al.
JOURNAL OF MATERIALS CHEMISTRY C (2019)
Two-dimensional spin-valley-coupled Dirac semimetals in functionalized SbAs monolayers
Zhifeng Liu et al.
MATERIALS HORIZONS (2019)
Many-Body Effect and Device Performance Limit of Monolayer InSe
Yangyang Wang et al.
ACS APPLIED MATERIALS & INTERFACES (2018)
Exploring Two-Dimensional Materials toward the Next-Generation Circuits: From Monomer Design to Assembly Control
Mengqi Zeng et al.
CHEMICAL REVIEWS (2018)
Recent progress in 2D group-VA semiconductors: from theory to experiment
Shengli Zhang et al.
CHEMICAL SOCIETY REVIEWS (2018)
PtSe2 Field-Effect Transistors: New Opportunities for Electronic Devices
AbdulAziz AlMutairi et al.
IEEE ELECTRON DEVICE LETTERS (2018)
Dirac Electrons at the Source: Breaking the 60-mV/Decade Switching Limit
Fei Liu et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2018)
Spatially controlled doping of two-dimensional SnS2 through intercalation for electronics
Yongji Gong et al.
NATURE NANOTECHNOLOGY (2018)
Simulations of Quantum Transport in Sub-5-nm Monolayer Phosphorene Transistors
Ruge Quhe et al.
PHYSICAL REVIEW APPLIED (2018)
Tunnel-Field-Effect Spin Filter from Two-Dimensional Antiferromagnetic Stanene
E. G. Marin et al.
PHYSICAL REVIEW APPLIED (2018)
Effects of Electric Field on the Electronic Structures of Broken-gap Phosphorene/SnX2 (X = S, Se) van der Waals Heterojunctions
Congxin Xia et al.
PHYSICAL REVIEW APPLIED (2018)
The era of hyper-scaling in electronics
Sayeef Salahuddin et al.
NATURE ELECTRONICS (2018)
Metrology for the next generation of semiconductor devices
N. G. Orji et al.
NATURE ELECTRONICS (2018)
Field-effect transistors made from solution-grown two-dimensional tellurene
Yixiu Wang et al.
NATURE ELECTRONICS (2018)
High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe
Denis A. Bandurin et al.
NATURE NANOTECHNOLOGY (2017)
Sub-10 nm Nanopattern Architecture for 2D Material Field-Effect Transistors
Kai Xu et al.
NANO LETTERS (2017)
High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se
Jinxiong Wu et al.
NATURE NANOTECHNOLOGY (2017)
A two-dimensional Fe-doped SnS2 magnetic semiconductor
Bo Li et al.
NATURE COMMUNICATIONS (2017)
Transistor Concepts Based on Lateral Heterostructures of Metallic and Semiconducting Phases of MoS2
Damiano Marian et al.
PHYSICAL REVIEW APPLIED (2017)
Many-body Effect, Carrier Mobility, and Device Performance of Hexagonal Arsenene and Antimonene
Yangyang Wang et al.
CHEMISTRY OF MATERIALS (2017)
Can a Black Phosphorus Schottky Barrier Transistor Be Good Enough?
Ruge Quhe et al.
ACS APPLIED MATERIALS & INTERFACES (2017)
Phosphorene: what can we know from computations?
Yu Jing et al.
WILEY INTERDISCIPLINARY REVIEWS-COMPUTATIONAL MOLECULAR SCIENCE (2016)
Rise of silicene: A competitive 2D material
Jijun Zhao et al.
PROGRESS IN MATERIALS SCIENCE (2016)
Performance of arsenene and antimonene double-gate MOSFETs from first principles
Giovanni Pizzi et al.
NATURE COMMUNICATIONS (2016)
Performance Upper Limit of sub-10 nm Monolayer MoS2 Transistors
Zeyuan Ni et al.
ADVANCED ELECTRONIC MATERIALS (2016)
Atomically Thin Arsenene and Antimonene: Semimetal-Semiconductor and Indirect-Direct Band-Gap Transitions
Shengli Zhang et al.
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION (2015)
2D Semiconductor FETs-Projections and Design for Sub-10 nm VLSI
Wei Cao et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2015)
Phosphorene: Fabrication, Properties, and Applications
Liangzhi Kou et al.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS (2015)
Robust Two-Dimensional Topological Insulators in Methyl-Functionalized Bismuth, Antimony, and Lead Bilayer Films
Yandong Ma et al.
NANO LETTERS (2015)
Two-dimensional materials and their prospects in transistor electronics
F. Schwierz et al.
NANOSCALE (2015)
Silicene field-effect transistors operating at room temperature
Li Tao et al.
NATURE NANOTECHNOLOGY (2015)
Tin Disulfide-An Emerging Layered Metal Dichalcogenide Semiconductor: Materials Properties and Device Characteristics
Yuan Huang et al.
ACS NANO (2014)
Black phosphorus field-effect transistors
Likai Li et al.
NATURE NANOTECHNOLOGY (2014)
Lateral Graphene-hBCN Heterostructures as a Platform for Fully Two-Dimensional Transistors
Gianluca Fiori et al.
ACS NANO (2012)
Monolayer MoS2 Transistors Beyond the Technology Road Map
Khairul Alam et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2012)
Single-layer MoS2 transistors
B. Radisavljevic et al.
NATURE NANOTECHNOLOGY (2011)
Carbon nanotube, graphene, nanowire, and molecule-based electron and spin transport phenomena using the nonequilibrium Green's function method at the level of first principles theory
Woo Youn Kim et al.
JOURNAL OF COMPUTATIONAL CHEMISTRY (2008)
Density-functional method for nonequilibrium electron transport -: art. no. 165401
M Brandbyge et al.
PHYSICAL REVIEW B (2002)
分享论文
