4.5 Article

Charge Detection in an Array of CMOS Quantum Dots

期刊

PHYSICAL REVIEW APPLIED
卷 14, 期 2, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevApplied.14.024066

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资金

  1. Agence Nationale de la Recherche [ANR-15-IDEX-02, ANR-16-ACHN-0029]
  2. GreQuE doctoral programs [754303]
  3. Mosquito project [688539]
  4. QuCube [810504]
  5. Agence Nationale de la Recherche (ANR) [ANR-16-ACHN-0029] Funding Source: Agence Nationale de la Recherche (ANR)

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The recent development of arrays of quantum dots in semiconductor nanostructures highlights the progress of quantum devices toward a large scale. However, how to realize such arrays on a scalable platform such as silicon is still an open question. One of the main challenges lies in the detection of charges within the array. It is a prerequisite to initialize a desired charge state and read out spins through spin-to-charge conversion mechanisms. In this work, we use two methods based on either a single-lead charge detector or a reprogrammable single-electron transistor. By these methods, we study the charge dynamics and sensitivity by performing single-shot detection of the charge. Finally, we can probe the charge stability at any node of a linear array and assess the Coulomb disorder in the structure. We find an electrochemical potential fluctuation induced by charge noise comparable to that reported in other silicon quantum dots.

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