相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。High-Performance p-BP/n-PdSe2 Near-Infrared Photodiodes with a Fast and Gate-Tunable Photoresponse
Amir Muhammad Afzal et al.
ACS APPLIED MATERIALS & INTERFACES (2020)
Tunable Electronic Properties and Potential Applications of 2D GeP/Graphene van der Waals Heterostructure
Hui Zeng et al.
ADVANCED ELECTRONIC MATERIALS (2020)
Asymmetric electrode incorporated 2D GeSe for self-biased and efficient photodetection
Muhammad Hussain et al.
Scientific Reports (2020)
Accurate characterization of next-generation thin-film photodetectors
Yanjun Fang et al.
NATURE PHOTONICS (2019)
Black Phosphorus-IGZO van der Waals Diode with Low-Resistivity Metal Contacts
Ghulam Dastgeer et al.
ACS APPLIED MATERIALS & INTERFACES (2019)
Layered material GeSe and vertical GeSe/MoS2 p-n heterojunctions
Wui Chung Yap et al.
NANO RESEARCH (2018)
Temperature-Dependent and Gate-Tunable Rectification in a Black Phosphorus/WS2 van der Waals Heterojunction Diode
Ghulam Dastgeer et al.
ACS APPLIED MATERIALS & INTERFACES (2018)
Silver-Nanowire-Embedded Transparent Metal-Oxide Heterojunction Schottky Photodetector
Sohail Abbas et al.
ACS APPLIED MATERIALS & INTERFACES (2018)
Atomically thin p-n junctions based on two-dimensional materials
Riccardo Frisenda et al.
CHEMICAL SOCIETY REVIEWS (2018)
WSe2/GeSe heterojunction photodiode with giant gate tunability
Zhenyu Yang et al.
NANO ENERGY (2018)
All metal oxide-based transparent and flexible photodetector
Sohail Abbas et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2018)
Saddle-Point Excitons and Their Extraordinary Light Absorption in 2D β-Phase Group-IV Monochalcogenides
Nannan Luo et al.
ADVANCED FUNCTIONAL MATERIALS (2018)
Band Structure and Photoelectric Characterization of GeSe Monolayers
Hongquan Zhao et al.
ADVANCED FUNCTIONAL MATERIALS (2018)
Tuning Carrier Tunneling in van der Waals Heterostructures for Ultrahigh Detectivity
Quoc An Vu et al.
NANO LETTERS (2017)
Systematic study of electronic structure and band alignment of monolayer transition metal dichalcogenides in Van der Waals heterostructures
Chenxi Zhang et al.
2D MATERIALS (2017)
Vertical versus Lateral Two-Dimensional Heterostructures: On the Topic of Atomically Abrupt p/n-Junctions
Ruiping Zhou et al.
NANO LETTERS (2017)
Enhanced current rectification and self-powered photoresponse in multilayer p-MoTe2/n-MoS2 van der Waals heterojunctions
Bin Wang et al.
NANOSCALE (2017)
Two-dimensional non-volatile programmable p-n junctions
Dong Li et al.
NATURE NANOTECHNOLOGY (2017)
Electronic Properties of Bulk and Monolayer TMDs: Theoretical Study Within DFT Framework (GVJ-2e Method)
Julia Gusakova et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2017)
Flexible Photodetectors Based on Novel Functional Materials
Chao Xie et al.
SMALL (2017)
Thin-film formation of 2D MoS2 and its application as a hole-transport layer in planar perovskite solar cells
Uttiya Dasgupta et al.
SOLAR ENERGY MATERIALS AND SOLAR CELLS (2017)
Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p-n junctions
Tiefeng Yang et al.
NATURE COMMUNICATIONS (2017)
Lateral heterostructures of monolayer group-IV monochalcogenides: band alignment and electronic properties
Kai Cheng et al.
JOURNAL OF MATERIALS CHEMISTRY C (2017)
Atomic Layer Deposition of p-Type Semiconducting Thin Films: a Review
Tripurari Sharan Tripathi et al.
ADVANCED MATERIALS INTERFACES (2017)
Electric and Photovoltaic Behavior of a Few-Layer α-MoTe2/MoS2 Dichalcogenide Heterojunction
Atiye Pezeshki et al.
ADVANCED MATERIALS (2016)
Band engineering in transition metal dichalcogenides: Stacked versus lateral heterostructures
Yuzheng Guo et al.
APPLIED PHYSICS LETTERS (2016)
Gate tunable WSe2-BP van der Waals heterojunction devices
Peng Chen et al.
NANOSCALE (2016)
Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe2/WS2 p-n heterojunctions
Cong Wang et al.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2016)
Study on the optical and electrical properties of tetracyanoethylene doped bilayer graphene stack for transparent conducting electrodes
Tej B. Limbu et al.
AIP ADVANCES (2016)
Electron Confinement at the Si/MoS2 Heterosheet Interface
Alessandro Molle et al.
ADVANCED MATERIALS INTERFACES (2016)
Strongly bound Mott-Wannier excitons in GeS and GeSe monolayers
Lidia C. Gomes et al.
PHYSICAL REVIEW B (2016)
A WSe2/MoSe2 heterostructure photovoltaic device
Nikolaus Floery et al.
APPLIED PHYSICS LETTERS (2015)
GeSe monolayer semiconductor with tunable direct band gap and small carrier effective mass
Yonghong Hu et al.
APPLIED PHYSICS LETTERS (2015)
Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides
Gui-Bin Liu et al.
CHEMICAL SOCIETY REVIEWS (2015)
Tunable GaTe-MoS2 van der Waals p-n Junctions with Novel Optoelectronic Performance
Feng Wang et al.
NANO LETTERS (2015)
Ultimate thin vertical p-n junction composed of two-dimensional layered molybdenum disulfide
Hua-Min Li et al.
NATURE COMMUNICATIONS (2015)
High-mobility and air-stable single-layer WS2 field-effect transistors sandwiched between chemical vapor deposition-grown hexagonal BN films
M. Waqas Iqbal et al.
SCIENTIFIC REPORTS (2015)
Gate tunable MoS2-black phosphorus heterojunction devices
Peng Chen et al.
2D MATERIALS (2015)
Novel Optical and Electrical Transport Properties in Atomically Thin WSe2/MoS2 p-n Heterostructures
Nengjie Huo et al.
ADVANCED ELECTRONIC MATERIALS (2015)
Preparation and Applications of Mechanically Exfoliated Single-Layer and Multi layer MoS2 and WSe2 Nanosheets
Hai Li et al.
ACCOUNTS OF CHEMICAL RESEARCH (2014)
Black Phosphorus-Monolayer MoS2 van der Waals Heterojunction p-n Diode
Yexin Deng et al.
ACS NANO (2014)
Photovoltaic Effect in an Electrically Tunable van der Waals Heterojunction
Marco M. Furchi et al.
NANO LETTERS (2014)
Atomically thin p-n junctions with van der Waals heterointerfaces
Chul-Ho Lee et al.
NATURE NANOTECHNOLOGY (2014)
Heterojunction Hybrid Devices from Vapor Phase Grown MoS2
Chanyoung Yim et al.
SCIENTIFIC REPORTS (2014)
Extraordinary Sunlight Absorption and One Nanometer Thick Photovoltaics Using Two-Dimensional Monolayer Materials
Marco Bernardi et al.
NANO LETTERS (2013)
Identification of individual and few layers of WS2 using Raman Spectroscopy
Ayse Berkdemir et al.
SCIENTIFIC REPORTS (2013)
High-Detectivity Multilayer MoS2 Phototransistors with Spectral Response from Ultraviolet to Infrared
Woong Choi et al.
ADVANCED MATERIALS (2012)
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Qing Hua Wang et al.
NATURE NANOTECHNOLOGY (2012)
Graphene as Transparent Electrode Material for Organic Electronics
Shuping Pang et al.
ADVANCED MATERIALS (2011)
Single-layer MoS2 transistors
B. Radisavljevic et al.
NATURE NANOTECHNOLOGY (2011)
p-Type Semiconducting GeSe Combs by a Vaporization-Condensation-Recrystallization (VCR) Process
Seok Min Yoon et al.
ADVANCED MATERIALS (2010)
A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu
Stefan Grimme et al.
JOURNAL OF CHEMICAL PHYSICS (2010)
Radiofrequency sputter deposition of germanium-selenide thin films for resistive switching
Dennis Braeuhaus et al.
THIN SOLID FILMS (2008)
Ab initio calculations of the electronic and optical properties of germanium selenide
L. Makinistian et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2007)
Electric field effect in atomically thin carbon films
KS Novoselov et al.
SCIENCE (2004)
Experimental analysis and theoretical model for anomalously high ideality factors (n>>2.0) in AlGaN/GaN p-n junction diodes
JM Shah et al.
JOURNAL OF APPLIED PHYSICS (2003)