期刊
NANO ENERGY
卷 80, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.nanoen.2020.105512
关键词
Thermoelectric performance; Bi2Te2.7Se0.3; Nanoinclusion; Power factor; Thermal conductivity
类别
资金
- National Natural Science Foundation of China [11674322, 51672278, 51972307]
Incorporation of nano-sized 3D topological insulator Bi2Se3 in n-type Bi2Te2.7Se0.3 alloy leads to improved electron mobility and electrical conductivity, as well as enhanced Seebeck coefficient due to energy dependent carrier scattering. Additionally, the inclusion of 3D-TI nanoinclusions results in enhanced phonon scattering, leading to a significant increase in power factor and decrease in total thermal conductivity of the material, ultimately increasing the figure of merit ZT.
n-type Bi2Te2.7Se0.3 (BTS) alloy is a state-of-the-art room temperature thermoelectric material used for refrigeration commercially. However, wide application is limited by its low performance. Here, we show that incorporation of nano-sized 3D topological insulator (3D-TI) Bi2Se3 in Bi2Te2.7Se0.3 bring about a large electron mobility and increased electrical conductivity owing to the enhanced contribution of topologically protected conducting surface states as well as large Seebeck coefficient due to energy dependent carrier scattering. Besides, the incorporation of 3D-TI nanoinclusions leads to enhanced phonon scattering. As a result, addition of 0.3 vol% of Bi2Se3 in BTS results in similar to 36% increase in power factor and similar to 16% decrease in total thermal conductivity, leading to a large figure of merit ZT(max) = 1.28 (at 375 K) and a large average ZT(ave) = 1.16 (at T = 300-525 K), which are 62% and 59% greater than that of BTS, respectively.
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