MXene Ti3C2 memristor for neuromorphic behavior and decimal arithmetic operation applications

MXene Ti3C2, as the emerging member of two-dimensional (2D) materials family, has been applied to memristor and exhibited fast pulse modulation time and miniaturization size. However, the current abrupt behavior of switching processes hampered its further applications as a neuro-bionic device. Here, we present a facile method to improve the electronic performance of 2D MXene Ti3C2-based memristor by Ag nanoparticle doping. Compared to the pure Ti3C2 device, the Ag nanoparticle doping method exhibits a bidirectional continuous current transition behavior. Then, the variation trend of excitatory postsynaptic current (EPSC) was analysis in detail, and the transition rule of short-term potentiation (STP) to long-term potentiation (LTP) was systematically summarized. More interestingly, the energy consumption of generate one spike in unit device is as low as 0.35pj. And the memristor has ability to implement decimal arithmetic operations such as addition and multiplication. Exploration of the microstructure and finite element analysis (FEA) shows that the atomic vacancies capture the metal ions to form the filaments. This work provides a facile method to improve the electronic neuromorphic performance of MXene Ti3C2 memristor, which will considerably promote the diversification development of 2D materials in the field of neuro-morphology chips and greatly enhance the practicability of 2D materials.

Automated summary

This study presents a facile method to improve the electronic performance of MXene Ti3C2 memristor by Ag nanoparticle doping. The doping method exhibits bidirectional continuous current transition behavior and has the potential to implement decimal arithmetic operations.