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David R. Rhiger et al.
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Veronica Letka et al.
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Gamini Ariyawansa et al.
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Donghai Wu et al.
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Midwave infrared barrier detector based on Ga-free InAs/InAsSb type-II superlattice grown by molecular beam epitaxy on Si substrate
Q. Durlin et al.
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Evangelia Delli et al.
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Joel M. Fastenau et al.
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K. Kanedy et al.
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David Z. Ting et al.
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Demonstration of long wavelength infrared type-II InAs/InAs1-xSbx superlattices photodiodes on GaSb substrate grown by metalorganic chemical vapor deposition
D. H. Wu et al.
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Defect-related surface currents in InAs-based nBn infrared detectors
X. Du et al.
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Ultra-short period Ga-free superlattice growth on GaSb
W. L. Sarney et al.
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Surface dark current mechanisms in III-V infrared photodetectors [Invited]
B. T. Marozas et al.
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Molecular beam epitaxial growth and characterization of large-format GaSb-based IR photodetector structures [Invited]
Amy W. K. Liu et al.
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Effect of substrate orientation on Sb-based MWIR photodetector characteristics
Dmitri Lubyshev et al.
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Development of Electron Beam Induced Current for diffusion length determination of VLWIR HgCdTe and MWIR T2SL based photodetectors
A. Yeche et al.
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Demonstration of HOT LWIR T2SLs InAs/InAsSb photodetectors grown on GaAs substrate
K. Michalczewski et al.
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David Z. Ting et al.
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Type-II superlattice hole effective masses
David Z. Ting et al.
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D. Cohen-Elias et al.
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Short wavelength infrared InAs/InSbiAlSb type-II superlattice photodetector
D. Cohen-Elias et al.
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Ruiting Hao et al.
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Anthony J. Ciani et al.
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Background-limited long wavelength infrared InAs/InAs1-xSbx type-II superlattice-based photodetectors operating at 110 K
Abbas Haddadi et al.
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Bias-selectable nBn dual-band long-/very long-wavelength infrared photodetectors based on InAs/InAs1-xSbx/AlAs1-xSbx type-II superlattices
Abbas Haddadi et al.
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Romain Chevallier et al.
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Minority carrier diffusion length for electrons in an extended SWIR InAs/AlSb type-II superlattice photodiode
D. Cohen-Elias et al.
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Heather J. Haugan et al.
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Extended short-wavelength infrared nBn photodetectors based on type-II InAs/AlSb/GaSb superlattices with an AlAsSb/GaSb superlattice barrier
A. Haddadi et al.
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Interband absorption strength in long-wave infrared type-II superlattices with small and large superlattice periods compared to bulk materials
I. Vurgaftman et al.
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David Z. Ting et al.
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Surface Leakage Mechanisms in III-V Infrared Barrier Detectors
D. E. Sidor et al.
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Zhen-Dong Ning et al.
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A. P. Craig et al.
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High-performance short-wavelength infrared photodetectors based on type-II InAs/InAs1-xSbx/AlAs1-xSbx superlattices
A. Haddadi et al.
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Bias-selectable dual-band mid-/long-wavelength infrared photodetectors based on InAs/InAs1-xSbx type-II superlattices
A. Haddadi et al.
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Evidence for a defect level above the conduction band edge of InAs/InAsSb type-II superlattices for applications in efficient infrared photodetectors
A. D. Prins et al.
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A. Haddadi et al.
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P. C. Klipstein et al.
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David Z. -Y. Ting et al.
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Influence of radiative and non-radiative recombination on the minority carrier lifetime in midwave infrared InAs/InAsSb superlattices
L. Hoeglund et al.
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Recent progress in InSb based quantum detectors in Israel
Philip Klipstein et al.
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InP-based short-wave infrared and midwave infrared photodiodes using a novel type-II strain-compensated quantum well absorption region
Baile Chen et al.
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Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice
B. V. Olson et al.
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N structure for type-II superlattice photodetectors
Omer Salihoglu et al.
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Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices
H. S. Kim et al.
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Jianliang Huang et al.
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Band gap of InAs1-xSbx with native lattice constant
S. P. Svensson et al.
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Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb
E. H. Steenbergen et al.
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Dark current filtering in unipolar barrier infrared detectors
G. R. Savich et al.
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Effect of contact doping in superlattice-based minority carrier unipolar detectors
B-M. Nguyen et al.
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Epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-II superlattices on GaSb substrates by metalorganic chemical vapor deposition for long wavelength infrared photodetectors
Y. Huang et al.
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David Z-Y Ting et al.
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Pierre-Yves Delaunay et al.
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Binh-Minh Nguyen et al.
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C. L. Canedy et al.
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S. Maimon et al.
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