4.7 Article

Fe-Doped g-C3N4: High-Performance Photocatalysts in Rhodamine B Decomposition

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POLYMERS
卷 12, 期 9, 页码 -

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MDPI
DOI: 10.3390/polym12091963

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Fe-doped g-C3N4; photocatalytic performance; interstitial; recombination rate

资金

  1. scientific and technological project at the level of Ministry of Education [B2018-SPH-06-CTrVL]

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Herein, Fe-doped C3N4 high-performance photocatalysts, synthesized by a facile and cost effective heat stirring method, were investigated systematically using powder X-ray diffraction (XRD), Fourier transform infrared (FTIR), scanning electron microscopy (SEM) and Brunauer-Emmett-Teller (BET) surface area measurement, X-ray photoelectron (XPS), UV-Vis diffusion reflectance (DRS) and photoluminescence (PL) spectroscopy. The results showed that Fe ions incorporated into a g-C3N4 nanosheet in both +3 and +2 oxidation states and in interstitial configuration. Absorption edge shifted slightly toward the red light along with an increase of absorbance in the wavelength range of 430-570 nm. Specific surface area increased with the incorporation of Fe into g-C3N4 lattice, reaching the highest value at the sample doped with 7 mol% Fe (FeCN7). A sharp decrease in PL intensity with increasing Fe content is an indirect evidence showing that electron-hole pair recombination rate decreased. Interestingly, Fe-doped g-C3N4 nanosheets present a superior photocatalytic activity compared to pure g-C3N4 in decomposing RhB solution. FeCN7 sample exhibits the highest photocatalytic efficiency, decomposing almost completely RhB 10 ppm solution after 30 min of xenon lamp illumination with a reaction rate approximately ten times greater than that of pure g-C3N4 nanosheet. This is in an agreement with the BET measurement and photoluminescence result which shows that FeCN7 possesses the largest specific surface area and low electron-hole recombination rate. The mechanism of photocatalytic enhancement is mainly explained through the charge transfer processes related to Fe2+/Fe3+ impurity in g-C3N4 crystal lattice.

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