期刊
ADVANCED ENERGY MATERIALS
卷 10, 期 39, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/aenm.202001726
关键词
CuInP2S6; density functional theory; negative capacitance; piezoresponse force microscopy; van der Waals
类别
资金
- U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Science and Engineering Division
- U.S. Department of Energy, Office of Science, Division of Materials Science and Engineering [DE-FG02-09ER46554]
- McMinn Endowment at Vanderbilt University
- Office of Science of the U.S. Department of Energy [DE-AC02-05CH11231]
- Air Force Research Laboratory under an Air Force Office of Scientific Research grant (LRIR) [19RXCOR052]
Negative capacitance (NC) provides a path to overcome the Boltzmann limit that dictates operating voltages in transistors and, therefore, may open up a path to the challenging proposition of lowering energy consumption and waste heat in nanoelectronic integrated circuits. Typically, NC effects in ferroelectric materials are based on either stabilizing a zero-polarization state or slowing down ferroelectric switching in order to access NC regimes of the free-energy distribution. Here, a fundamentally different mechanism for NC, based on CuInP2S6, a van der Waals layered ferrielectric, is demonstrated. Using density functional theory and piezoresponse force microscopy, it is shown that an unusual combination of high Cu-ion mobility and its crucial role in determining polarization magnitude and orientation (P) leads to a negative slope of the polarization versus the electric field E,dP/dE < 0, which is a requirement for NC. This mechanism for NC is likely to occur in a wide class of materials, offering new possibilities for NC-based devices. The nanoscale demonstration of this mechanism can be extended to the device-level by increasing the regions of homogeneous polarization and polarization switching, for example, through strain engineering and carefully selected electric field pulses.
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