期刊
NATURE COMMUNICATIONS
卷 11, 期 1, 页码 -出版社
NATURE RESEARCH
DOI: 10.1038/s41467-020-18932-5
关键词
-
资金
- University of California (UC) Office of the President under the UC Laboratory Fees Research Program Collaborative Research and Training Award [LFR-17-477148]
- Laboratory Directed Research and Development (LDRD) program at Los Alamos National Laboratory [20200213DR]
The emerging technology of colloidal quantum dot electronics provides an opportunity for combining the advantages of well-understood inorganic semiconductors with the chemical processability of molecular systems. So far, most research on quantum dot electronic devices has focused on materials based on Pb- and Cd chalcogenides. In addition to environmental concerns associated with the presence of toxic metals, these quantum dots are not well suited for applications in CMOS circuits due to difficulties in integrating complementary n- and p-channel transistors in a common quantum dot active layer. Here, we demonstrate that by using heavy-metal-free CuInSe2 quantum dots, we can address the problem of toxicity and simultaneously achieve straightforward integration of complimentary devices to prepare functional CMOS circuits. Specifically, utilizing the same spin-coated layer of CuInSe2 quantum dots, we realize both p- and n-channel transistors and demonstrate well-behaved integrated logic circuits with low switching voltages compatible with standard CMOS electronics. Designing efficient toxic-element-free technologies in solution-processable CMOS electronics remains a challenge. Here, the authors demonstrate integrated logic CMOS circuits based on heavy-metal-free colloidal CuInSe2 quantum dots with low switching voltages and with degradation-free performance on month-long time scales.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据