4.8 Article

Fabrication of a novel magnetic topological heterostructure and temperature evolution of its massive Dirac cone

期刊

NATURE COMMUNICATIONS
卷 11, 期 1, 页码 -

出版社

NATURE RESEARCH
DOI: 10.1038/s41467-020-18645-9

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资金

  1. JSPS KAKENHI [18H03877]
  2. Murata Science Foundation [H30-084]
  3. Asahi Glass Foundation
  4. Iketani Science and Technology Foundation [0321083-A]
  5. Spintronics Research Network of Japan (Spin-RNJ)
  6. Ministry of Education, Culture, Sports, Science and Technology [A-18-AE-0039, 2018B-E21]
  7. Tomsk State University competitiveness improvement program [8.1.01.2018]
  8. Saint Petersburg State University [51126254]
  9. Russian Science Foundation [18-12-00169]
  10. Government research assignment for ISPMS SB RAS [III.23.2.9]
  11. Spanish Ministerio de Ciencia e Innovacion [PID2019-103910GB-I00]
  12. Tokyo Tech. Challenging Research Award
  13. Russian Science Foundation [18-12-00169] Funding Source: Russian Science Foundation
  14. Grants-in-Aid for Scientific Research [18H03877] Funding Source: KAKEN

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Materials that possess nontrivial topology and magnetism is known to exhibit exotic quantum phenomena such as the quantum anomalous Hall effect. Here, we fabricate a novel magnetic topological heterostructure Mn4Bi2Te7/Bi2Te3 where multiple magnetic layers are inserted into the topmost quintuple layer of the original topological insulator Bi2Te3. A massive Dirac cone (DC) with a gap of 40-75meV at 16K is observed. By tracing the temperature evolution, this gap is shown to gradually decrease with increasing temperature and a blunt transition from a massive to a massless DC occurs around 200-250K. Structural analysis shows that the samples also contain MnBi2Te4/Bi2Te3. Magnetic measurements show that there are two distinct Mn components in the system that corresponds to the two heterostructures; MnBi2Te4/Bi2Te3 is paramagnetic at 6K while Mn4Bi2Te7/Bi2Te3 is ferromagnetic with a negative hysteresis (critical temperature similar to 20K). This novel heterostructure is potentially important for future device applications.

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