A solar-blind photodetector based on β-Ga2O3 film deposited on MgO (100) substrates by RF magnetron sputtering

beta-Ga2O3 thin films were deposited on the MgO (100) substrates at 600 degrees C, 650 degrees C and 700 degrees C by the radio frequency magnetron sputtering. The film fabricated at 700 degrees C has high crystallinity with the orientation relationship of beta-Ga2O3 (100)parallel to MgO (100). The metal-semiconductor-metal (MSM) structured solar-blind photodetectors were prepared based on the beta-Ga2O3 film fabricated at 700 degrees C successfully. In this study, the photodetector has excellent performance with the extremely low dark current 3.5 pA at 10 V bias, and the I-light/I-dark ratio is over 10(4) with short rise time (0.07 s/0.53 s) and decay time (0.06 s/0.16 s). Low dark current and short rise time and decay time can be both achieved simultaneously. The good consistency and repeatability of the sample show great potential in the practical applications of solar-blind photodetectors.