Substrate temperature induced physical property variation of InxAl1-xN alloys prepared on Al2O3 by magnetron sputtering

InxAl1-x N alloys were prepared on Al2O3 substrates using radio frequency magnetron sputtering. The physical properties of InxAl1-x N alloys sputtered at different substrate temperatures were systematically studied. The results indicated that the sputtered InxAl1-x N alloys had c-axis preferred orientation and exhibited phase separation under the substrate temperature over 450 degrees C. The In content was calculated about 0.62 according to the Vegard's law. It was found that the surface morphology of In-0.62 Al-0.38 N alloys showed a transition from nanodots to nanoclusters and disordered morphology as the substrate temperature was increased from 150 to 450 degrees C. This research will lay a good foundation for the application of InxAl1-x N-based optoelectronic devices.