Low voltage organic transistors with water-processed gum arabic dielectric

In this communication, low voltage organic thin film transistors (OTFTs) using water-processed gum arabic (GA) as the gate dielectric are reported. The fabricated OTFTs operate at 3 V with a field-effect mobility in the saturation regime mu(sat) = 0.6 cm(2)V(-1)s(-1), threshold voltage V-th = -0.35 V, subthreshold swing SS = 350 mV/dec, and on/off current ratio I-ON/OFF > 10(2). The characterization of metal-insulator-metal (MIM) capacitors shows that the studied GA displays high dielectric constant at 1 kHz (k similar to 30) and that the leakage current density through the prepared (1250 +/- 14) nm thick GA films is around 10(-7) A/cm(2) at +/- 3 V. As a result, gum arabic emerges as a promising gate dielectric for low voltage OTFTs especially when the requirements of eco-friendly manufacturing are considered.