期刊
SOLAR ENERGY MATERIALS AND SOLAR CELLS
卷 215, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.solmat.2020.110643
关键词
Silicon heterojunction solar cells; Surface passivation; Low deposition rate; Amorphous silicon; RF; VHF
资金
- National Natural Science Foundation of China [11774016, 61974008, 61922005]
- National Key Research and Development Program of China [2016YFB0700703]
Here we report a certified efficiency of up to 25.11% for silicon heterojunction (SHJ) solar cells on a full size n-type M2 monocrystalline-silicon (c-Si) wafer (total area, 244.5 cm(2)). An ultra-thin intrinsic a-Si:H buffer layer was introduced on the c-Si wafer surface using a 13.56 MHz home-made RF-PECVD with low deposition rate showing superior surface passivation. The ultra-thin i-a-Si:H film with both higher microstructure factor (R*) and H content evidently increases the SHJ solar cell open-circuit voltage (V-OC) by 2 mV, and moreover, short-circuit current (I-SC) and fill factor (FF) are also notably improved, resulting in a 0.52% absolute cell efficiency enhancement, in which FF is the main cause. In order to explore high conversion efficiency SHJ solar cells, both home-made RF-PECVD and commercial VHF-PECVD (40.68 MHz) are employed for deposition of the i-a-Si:H passivation layer. As a result, the efficiency of RF-PECVD-prepared SHJ cell is 0.21% higher than that of VHF-PECVD-prepared, mainly driven by V-OC and I-SC boost. This work offers a useful tool for fabrication of high performance SHJ solar cells which could be employed in mass production.
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