期刊
SOLAR ENERGY
卷 207, 期 -, 页码 479-485出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.solener.2020.07.007
关键词
GIGS; WS2; Solar cell; Band offset; Defect state; Solar cell capacitance simulator
资金
- National University of Malaysia [RS 2018-003]
- University Tenaga Nasional, Malaysia
Device modelling of copper indium gallium selenide (CIGS) solar cell with tungsten di-suphide (WS2) as a window layer has been carried out in order to achieve higher conversion efficiency. Conversion efficiency for all band-gap energies of CIGS were calculated based on proposed new CIGS/WS2 structure. Numerical modelling tools were used to investigate the effects conduction band offset and interface defect state on the photovoltaic parameters of CIGS/WS2 solar cell. The model predicts the density of defect tolerance in the interface is 1 x 10(11) cm(3). Based on optimization, the highest efficiency of 26.4% has been achieved for CIGS/WS2 solar cell with Eg((CIGS)) = 1.4 eV (V-oc = 1.026 V, J(sc) = 29.57 mA/cm(2) and FF = 86.96%) which is better than that of CIGS (23.4%) solar cell. The simulation further identifies that proposed CIGS/WS2 structure is less temperature sensitive compared to conventional Si solar cell. This research paves the way for WS2 thin film as a potential window layer material for CIGS solar cells.
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