期刊
SENSORS AND ACTUATORS B-CHEMICAL
卷 321, 期 -, 页码 -出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.snb.2020.128475
关键词
In implantation; SnO2 nanowire; Core-shell; Gas sensor; Sensing mechanism
资金
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education [2016R1A6A1A03013422]
- National Research Foundation of Korea (NRF) - Korea government (MSIT) [2016M2B2A4911989, 2019R1A2C1006193]
- National Research Foundation of Korea [2016M2B2A4911989] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We present a new sensing mechanism concept to explain the enhanced gas response of In-implanted SnO2 nanowires (NWs) obtained by ion implantation. We first prepared SnO2 NWs and then implanted indium ions on SnO2 NWs at doses of 2 x 10(14) and 1.8 x 10(15) ion/cm(2), respectively. Gas sensors were fabricated, and the gas sensing properties of pristine and In-implanted SnO2-NW-based gas sensors were investigated. The sensing results demonstrated that the implanted In3+ improved the gas sensing performance. The obtained results indicated that the sensing improvement of the In-implanted (2 x 10(14) ion/cm(2)) SnO2 NW gas sensor was associated with the formation of structural defects and, most importantly, generation of a homo-core-shell structure within the SnO2 NWs. This structure acted as a powerful source of resistance modulation and significantly improved the response of the optimized gas sensor. Therefore, we demonstrated the possibility of sensing enhancement of metal oxides by ion implantation.
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