相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Rapid thermal annealing on the atomic layer-deposited zirconia thin film to enhance resistive switching characteristics
Yawar Abbas et al.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS (2020)
Toward a Reliable Synaptic Simulation Using Al-Doped HfO2 RRAM
Sourav Roy et al.
ACS APPLIED MATERIALS & INTERFACES (2020)
Engineering of defects in resistive random access memory devices
Writam Banerjee et al.
JOURNAL OF APPLIED PHYSICS (2020)
Resistive switching in HfO2 based valence change memories, a comprehensive 3D kinetic Monte Carlo approach
S. Aldana et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2020)
Fully hardware-implemented memristor convolutional neural network
Peng Yao et al.
NATURE (2020)
Dependence of InGaZnO and SnO2 thin film stacking sequence for the resistive switching characteristics of conductive bridge memory devices
Asif Ali et al.
APPLIED SURFACE SCIENCE (2020)
Alloying conducting channels for reliable neuromorphic computing
Hanwool Yeon et al.
NATURE NANOTECHNOLOGY (2020)
The coexistence of threshold and memory switching characteristics of ALD HfO2memristor synaptic arrays for energy-efficient neuromorphic computing
Haider Abbas et al.
NANOSCALE (2020)
Study of in Situ Silver Migration in Amorphous Boron Nitride CBRAM Device
Yu-Rim Jeon et al.
ACS APPLIED MATERIALS & INTERFACES (2019)
Improved resistive switching and synaptic characteristics using Ar plasma irradiation on the Ti/HfO2 interface
Boncheol Ku et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2019)
Recommended Methods to Study Resistive Switching Devices
Mario Lanza et al.
ADVANCED ELECTRONIC MATERIALS (2019)
A Novel Resistive Switching Identification Method through Relaxation Characteristics for Sneak-path-constrained Selectorless RRAM application
Ying-Chen Chen et al.
SCIENTIFIC REPORTS (2019)
Silver-Adapted Diffusive Memristor Based on Organic Nitrogen-Doped Graphene Oxide Quantum Dots (N-GOQDs) for Artificial Biosynapse Applications
Andrey Sergeevich Sokolov et al.
ADVANCED FUNCTIONAL MATERIALS (2019)
Data retention investigation in Al:HfO2-based resistive random access memory arrays by using high-temperature accelerated tests
Eduardo Perez et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2019)
Reinforcement learning with analogue memristor arrays
Zhongrui Wang et al.
NATURE ELECTRONICS (2019)
Tailored nanoplateau and nanochannel structures using solution-processed rutile TiO2 thin films for complementary and bipolar switching characteristics
Yawar Abbas et al.
NANOSCALE (2019)
Filament Growth and Resistive Switching in Hafnium Oxide Memristive Devices
Sven Dirkmann et al.
ACS APPLIED MATERIALS & INTERFACES (2018)
An in-depth description of bipolar resistive switching in Cu/HfOx/Pt devices, a 3D kinetic Monte Carlo simulation approach
S. Aldana et al.
JOURNAL OF APPLIED PHYSICS (2018)
Analysis of conductive filament density in resistive random access memories: a 3D kinetic Monte Carlo approach
Samuel Aldana et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2018)
Reduction of the Cell-to-Cell Variability in Hf1-xAlxOy Based RRAM Arrays by Using Program Algorithms
E. Perez et al.
IEEE ELECTRON DEVICE LETTERS (2017)
: a physical model for RRAM devices simulation
Marco A. Villena et al.
JOURNAL OF COMPUTATIONAL ELECTRONICS (2017)
In-depth study of the physics behind resistive switching in TiN/Ti/HfO2/W structures
Gerardo Gonzalez-Cordero et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2017)
A new parameter to characterize the charge transport regime in Ni/HfO2/Si-n+-based RRAMs
M. A. Villena et al.
SOLID-STATE ELECTRONICS (2016)
Intrinsic Tailing of Resistive States Distributions in Amorphous HfOx and TaOx Based Resistive Random Access Memories
Sergiu Clima et al.
IEEE ELECTRON DEVICE LETTERS (2015)
Investigation of Forming, SET, and Data Retention of Conductive-Bridge Random-Access Memory for Stack Optimization
Jeremy Guy et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2015)
Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching
Andrea Padovani et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2015)
Understanding filamentary growth in electrochemical metallization memory cells using kinetic Monte Carlo simulations
Stephan Menzel et al.
NANOSCALE (2015)
Training andoperation of an integrated neuromorphic network based on metal-oxide memristors
M. Prezioso et al.
NATURE (2015)
A memristive spiking neuron with firing rate coding
Marina Ignatov et al.
FRONTIERS IN NEUROSCIENCE (2015)
Electron-Injection-Assisted Generation of Oxygen Vacancies in Monoclinic HfO2
Samuel R. Bradley et al.
PHYSICAL REVIEW APPLIED (2015)
Recent progress in resistive random access memories: Materials, switching mechanisms, and performance
F. Pan et al.
MATERIALS SCIENCE & ENGINEERING R-REPORTS (2014)
A million spiking-neuron integrated circuit with a scalable communication network and interface
Paul A. Merolla et al.
SCIENCE (2014)
A Physics-Based Compact Model of Metal-Oxide-Based RRAM DC and AC Operations
Peng Huang et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2013)
Pattern classification by memristive crossbar circuits using ex situ and in situ training
Fabien Alibart et al.
NATURE COMMUNICATIONS (2013)
A simulation framework for modeling charge transport and degradation in high-k stacks
Luca Larcher et al.
JOURNAL OF COMPUTATIONAL ELECTRONICS (2013)
On the Switching Parameter Variation of Metal-Oxide RRAM-Part I: Physical Modeling and Simulation Methodology
Ximeng Guan et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2012)
分享论文
