期刊
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
卷 35, 期 11, 页码 -出版社
IOP Publishing Ltd
DOI: 10.1088/1361-6641/abb072
关键词
resistive switching memory; valence change memories; simulation tools; conductive filaments; kinetic Monte Carlo; data retention
类别
资金
- government of Andalusia (Spain) [A.TIC.117.UGR18]
- FEDER program
- German Research Foundation (DFG) [FOR2093]
Kinetic Monte Carlo resistive random access memory simulations are used to understand different retention experiments performed at several temperatures. The physics behind resistive switching allows to explain experimental results, in particular the degradation of the conductive filaments with temperature. It is observed that competing mechanisms control resistive switching in this type of experiments and the thermal dependencies involved are key to explain the measurements. Besides, the simulation approach allows to analyze the existence of percolation paths in the device dielectric and the conductive filament density and compactness. Finally, the key physical mechanisms are detected and some clues related to the retention performance and possible technology improvements are unveiled.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据