期刊
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
卷 35, 期 11, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6641/abb9fe
关键词
SnO2; Ti doping; high performance; thin-film transistor; negative bias stress
类别
资金
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Korea government (MSIT) [2019R1F1A1059788]
- National Research Foundation of Korea [2019R1F1A1059788] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Sol-gel-processed Ti-doped SnO(2)thin-film transistors (TFTs) were successfully fabricated for the first time, and the effects of the concentration of the Ti dopant on their structural, chemical, and optical properties were investigated. The introduced Ti dopant showed potential as a promising oxygen vacancy suppressor. Additionally, the results showed that the 0.1 wt% Ti-doped SnO2TFT had a field-effect mobility of 10.21 cm(2)V(-1)s(-1), a subthreshold swing of 0.87, and anI(on)/I(off)value of similar to 1 x 10(8), as well as good negative bias stress characteristics. The success of the Ti doping could be attributed to its small ionic size, high Lewis acid strength, and strong bonding strength. Therefore, the introduced sol-gel-processed Ti-doped SnO2TFTs stand as promising candidates with potential for application in transparent displays as well as larger area electronics applications.
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