期刊
CRYSTAL GROWTH & DESIGN
卷 16, 期 6, 页码 3409-3415出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.cgd.6b00398
关键词
-
资金
- French National Research Agency (ANR) under the GANEX Laboratory of Excellence (Labex) project
- French National Research Agency [ANR-10-EQPX-50]
This article reports on two-dimensional (2D) layered hexagonal BN (h-BN) grown on sapphire by metalorganic vapor phase epitaxy (MOVPE). The highly oriented lattice and hexagonal phase of the epitaxial layers were confirmed by X-ray diffraction, Raman spectrum, and cross-section scanning transmission electron microscopy. The surface of BN over a 2-in. wafer exhibits specific 2D material morphology features for different BN thicknesses, from an atomically flat surface to a honeycomb wrinkle network. The grown epitaxial layers demonstrate a large absorption coefficient (similar to 10(6) cm(-1)) above the bandgap energy of 5.87 eV with direct band transition behavior. Near-bandgap luminescence at 216.5 nm (5.73 eV) and characteristic defect band recombination-at longer wavelengths were observed by cathodoluminescence at 77 K. This wafer-scale MOVPE-grown layered h-BN with different 2D morphology and with near bandgap emission can facilitate applications such as graphene-based electronics, advanced, van der Waals heterostructures, and deep UV photonics.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据