Energy storage properties of antiferroelectric 0.92NaNbO3-0.08SrZrO3 film on (001)SrTiO3 substrate

The present study demonstrates the fabrication of an antiferroelectric 0.92NaNbO(3)-0.08SrZrO(3) film deposited on a SrRuO3 coated (001)SrTiO3 single crystal substrate by pulsed laser deposition. In the 0.92NaNbO(3)-0.08SrZrO(3) film, the domain with its c-axis aligned with the out-of-plane direction contributed to the stabilization of an antiferroelectric phase under the high electric field. The film had an energy storage density of 2.9 J cm(-3) and storage efficiency of 67% at room temperature, which kept at 2.5 J cm(-3) and 50% at high temperature of 150 degrees C. (C) 2020 Elsevier B.V. All rights reserved.