期刊
PHYSICAL REVIEW LETTERS
卷 125, 期 11, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.125.117001
关键词
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资金
- National Science Foundation [DMR 1410265]
- Office of Naval Research [N00014-18-1-2675]
- National Natural Science Foundation of China [11574128]
- MOST 973 Program [2014CB921402]
- Hundred Talents Plan of Sun Yat-Sen University [76120-18841210]
- Center for Materials Processing, a Tennessee Higher Education Commission
Adsorption of one-third monolayer of Sn on an atomically clean Si(111) substrate produces a two-dimensional triangular adatom lattice with one unpaired electron per site. This dilute adatom reconstruction is an antiferromagnetic Mott insulator; however, the system can be modulation doped and metallized using heavily doped p-type Si(111) substrates. Here, we show that the hole-doped dilute adatom layer on a degenerately doped p-type Si(111) wafer is superconducting with a critical temperature of 4.7 +/- 0.3 K. While a phonon-mediated coupling scenario would be consistent with the observed T-c, Mott correlations in the Sn-derived dangling-bond surface state could suppress the s-wave pairing channel. The latter suggests that the superconductivity in this triangular adatom lattice may be unconventional.
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