High-Quality Si-Doped β-Ga2O3Films on Sapphire Fabricated by Pulsed Laser Deposition

Pulsed laser ablation is used to form high-quality silicon-doped beta-Ga(2)O(3)films on sapphire by alternatively depositing Ga(2)O(3)and Si from two separate sources. X-ray analysis reveals a single crystallinity with a full width at half maximum for the rocking curve around the (-201) reflection peak of 1.6 degrees. Silicon doping concentration is determined by elastic recoil detection analysis (ERDA), and the best electrical performance is reached at a Si concentration of about 1 x 10(20) cm(-3), using optimized deposition parameters. It is found that a high crystalline quality and a mobility of about 2.9 cm(2) (V s)(-1)can be achieved by depositing Si and Ga(2)O(3)from two separate sources. Two types of Schottky contacts are fabricated: one with a pure Pt and one with a PtO(x)composition. Electrical results from these structures are also presented.

Automated summary

Pulsed laser ablation is used to form high-quality silicon-doped beta-Ga(2)O(3)films on sapphire by depositing Ga(2)O(3)and Si from two separate sources, achieving a single crystallinity with a Si concentration of about 1 x 10(20) cm(-3) for optimal electrical performance. Depositing Si and Ga(2)O(3)from two separate sources leads to high crystalline quality and a mobility of about 2.9 cm(2) (V s)(-1).