期刊
NATURE MATERIALS
卷 19, 期 11, 页码 1195-+出版社
NATURE PORTFOLIO
DOI: 10.1038/s41563-020-0765-x
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资金
- Research Council of Norway [231430/F20, 275139, 245963/F50]
- UNINETT Sigma2 [NN9264K, ntnu243]
- Norwegian Centre for Transmission Electron Microscopy, NORTEM [197405]
- Norwegian Research Council [274459]
- European Research Council under the European Union [724529]
- Ministerio de Economia, Industria y Competitividad [MAT201677100-C2-2-P, SEV-2015-0496]
- Generalitat de Catalunya [2017SGR 1506]
- US Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division [DE-AC02-05-CH11231, KC2202]
- Academy of Finland [322832]
- NTNU
- NTNU's Enabling technologies: Nanotechnology
- Academy of Finland (AKA) [322832, 322832] Funding Source: Academy of Finland (AKA)
- European Research Council (ERC) [724529] Funding Source: European Research Council (ERC)
Combining quantum effects with conductivity modulation in complex oxides requires mutually exclusive criteria, making applications difficult. Using tip-induced electrical generation of anti-Frenkel defects, conducting features in Er(Mn,Ti)O(3)are written with nanoscale precision while keeping structural integrity. Utilizing quantum effects in complex oxides, such as magnetism, multiferroicity and superconductivity, requires atomic-level control of the material's structure and composition. In contrast, the continuous conductivity changes that enable artificial oxide-based synapses and multiconfigurational devices are driven by redox reactions and domain reconfigurations, which entail long-range ionic migration and changes in stoichiometry or structure. Although both concepts hold great technological potential, combined applications seem difficult due to the mutually exclusive requirements. Here we demonstrate a route to overcome this limitation by controlling the conductivity in the functional oxide hexagonal Er(Mn,Ti)O(3)by using conductive atomic force microscopy to generate electric-field induced anti-Frenkel defects, that is, charge-neutral interstitial-vacancy pairs. These defects are generated with nanoscale spatial precision to locally enhance the electronic hopping conductivity by orders of magnitude without disturbing the ferroelectric order. We explain the non-volatile effects using density functional theory and discuss its universality, suggesting an alternative dimension to functional oxides and the development of multifunctional devices for next-generation nanotechnology.
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