High performance IGZO-based phototransistors by BN/BP interface engineering

Some advances have been achieved in developing heterojunctions consisting of indium-gallium-zinc oxide (a-IGZO) films and two dimensional (2D) van der Waals materials for optoelectronic applications in recent years, however, the improvement of IGZO channel itself via constructing such heterojunctions is rarely reported. Here, we report the huge improvement in photoresponse performances for the IGZO phototransistor devices by introducing boron nitride (BN)/black phosphorus (BP) interface engineering. By creating an appropriate band bending and an efficient photo-generated carrier transfer path between IGZO and BP, the recombination of the photo-generated carriers in the IGZO channel is significantly suppressed. As a result, the corresponding photoresponsivity at a wavelength of 447 nm can be promoted from 0.05 A W(-1)to 0.3 A W-1. A corresponding maximum external quantum efficiency of 83.4% was obtained for the BN/BP decorated IGZO phototransistor. The results imply that such interface engineering via 2D materials can be used as a general route to high performance oxide-semiconductor based optoelectronic devices.

Automated summary

In this study, a huge improvement in photoresponse performances for IGZO phototransistor devices was achieved by introducing boron nitride (BN)/black phosphorus (BP) interface engineering, leading to a significant suppression of photo-generated carrier recombination in the IGZO channel. This approach resulted in enhanced photoresponsivity and external quantum efficiency, demonstrating the potential of 2D materials interface engineering for high performance oxide-semiconductor based optoelectronic devices.