Monolayer MoS2 epitaxy

As an emerging two-dimensional (2D) semiconductor material, monolayer MoS(2)has recently attracted considerable attention. Various promising applications of this material have been proposed for electronics, optoelectronics, sensing, catalysis, energy storage, and so on. To realize these practical applications, high-quality and large-area MoS(2)with controllable properties is required. Among the many different synthesis techniques, epitaxy provides a promising route for producing MoS(2)monolayers. Here, we review the epitaxial growth of monolayer MoS(2)on various substrates, with a particular focus on large-scale films with large domain sizes and high domain alignments. Finally, we offer perspectives and challenges for future research and applications of this technology.

Automated summary

Monolayer MoS(2) as an emerging 2D semiconductor material has various promising applications. Epitaxy is a promising technique for producing high-quality, large-area MoS(2) with controllable properties. Future research will focus on large-scale films with large domain sizes and high domain alignments.