期刊
NANO LETTERS
卷 20, 期 10, 页码 7793-7801出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.0c03548
关键词
synaptic consolidation; artificial synapse; neuromorphic computing; single-crystal indium phosphide
类别
资金
- USC Provost Graduate Fellowship
- USC Annenberg Endowed Graduate Fellowship
- National Science Foundation [1610604]
- Semiconductor Research Corporation [1571721]
- NASA JPL
- USC
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1610604] Funding Source: National Science Foundation
As one of the key neuronal activities associated with memory in the human brain, memory consolidation is the process of the transition of short-term memory (STM) to long-term memory (LTM), which transforms an external stimulus to permanently stored information. Here, we report the emulation of this complex synaptic function, consolidation of STM to LTM, in a single-crystal indium phosphide (InP) field effect transistor (FET)-based artificial synapse. This behavior is achieved via the dielectric band and charge trap lifetime engineering in a dielectric gate heterostructure of aluminum oxide and titanium oxide. We analyze the behavior of these complex synaptic functions by engineering a variety of action potential parameters, and the devices exhibit good endurance, long retention time (>10(5) s), and high uniformity. Uniquely, this approach utilizes growth and device fabrication techniques which are scalable and back-end CMOS compatible, making this InP synaptic device a potential building block for neuromorphic computing.
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