期刊
NANO LETTERS
卷 20, 期 10, 页码 7200-7206出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.0c02537
关键词
two-dimensional materials; charge density waves; memristors; scanning photocurrent microscopy
类别
资金
- U.S. Army Research Office [W911NF-19-10267]
- Ontario Early Researcher Award [ER17-13-199]
- National Science and Engineering Research Council of Canada [RGPIN-2017-03815]
- Canada First Research Excellence Fund
- Georg H. Endress Foundation
- National Key Research and Development Program [2016YFA0300404]
- National Nature Science Foundation of China [11674326, 11774351, 11874357]
- National Natural Science Foundation of China [U1832141, U1932217]
- Chinese Academy of Sciences' Large-Scale Scientific Facility [U1832141, U1932217]
Transport studies of atomically thin 1T-TaS2 have demonstrated the presence of intermediate resistance states across the nearly commensurate (NC) to commensurate (C) charge density wave (CDW) transition, which can be further switched electrically. While this presents exciting opportunities for memristor applications, the switching mechanism could be potentially attributed to the formation of inhomogeneous C and NC domains. Here, we present combined electrical driving and photocurrent imaging of ultrathin 1T-TaS2 in a heterostructure geometry. While micron-sized CDW domains are seen upon cooling, electrically driven transitions are largely uniform, indicating that the latter likely induces true metastable CDW states, which we then explain by a free energy analysis. Additionally, we are able to perform repeatable and bidirectional switching across the intermediate states without changing sample temperature, demonstrating that atomically thin 1T-TaS2 can be further used as a robust and reversible multimemristor material for the first time.
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