期刊
NANO LETTERS
卷 20, 期 10, 页码 7513-7518出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.0c02983
关键词
Interfacial thermal conductivity; graphite; h-BN; twisted interface; misfit angle; phonon-phonon coupling; registry-dependent interlayer potential
类别
资金
- fellowship program for outstanding postdoctoral researchers from China and India in Israeli Universities
- National Natural Science Foundation of China [11890673, 11890674]
- Israel Science Foundation [1141/18, 1586/17]
- ISF-NSFC joint Grant [3191/19]
- Naomi Foundation
- COST Action [MP1303]
Thermal conductivity of homogeneous twisted stacks of graphite is found to strongly depend on the misfit angle. The underlying mechanism relies on the angle dependence of phonon-phonon couplings across the twisted interface. Excellent agreement between the calculated thermal conductivity of narrow graphitic stacks and corresponding experimental results indicates the validity of the predictions. This is attributed to the accuracy of interlayer interaction descriptions obtained by the dedicated registry-dependent interlayer potential used. Similar results for h-BN stacks indicate overall higher conductivity and reduced misfit angle variation. This opens the way for the design of tunable heterogeneous junctions with controllable heat-transport properties ranging from substrate-isolation to efficient heat evacuation.
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