4.8 Article

Spin Relaxation Benchmarks and Individual Qubit Addressability for Holes in Quantum Dots

期刊

NANO LETTERS
卷 20, 期 10, 页码 7237-7242

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.0c02589

关键词

Germanium; quantum dots; spin relaxation; qubits

资金

  1. FOM Projectruimte
  2. Vidi programme

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We investigate hole spin relaxation in the single- and multihole regime in a 2 x 2 germanium quantum dot array. We find spin relaxation times T-1 as high as 32 and 1.2 ms for quantum dots with single- and five-hole occupations, respectively, setting benchmarks for spin relaxation times for hole quantum dots. Furthermore, we investigate qubit addressability and electric field sensitivity by measuring resonance frequency dependence of each qubit on gate voltages. We can tune the resonance frequency over a large range for both single and multihole qubits, while simultaneously finding that the resonance frequencies are only weakly dependent on neighboring gates. In particular, the five-hole qubit resonance frequency is more than 20 times as sensitive to its corresponding plunger gate. Excellent individual qubit tunability and long spin relaxation times make holes in germanium promising for addressable and high-fidelity spin qubits in dense two-dimensional quantum dot arrays for large-scale quantum information.

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