期刊
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
卷 117, 期 -, 页码 -出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2020.105161
关键词
Bilayer high-k; LaON passivation; PEALD; Dielectric breakdown field; Fowler-Nordheim (FN) tunneling
类别
资金
- Council of Scientific and Industrial Research (CSIR), New Delhi [22(0716)/16/EMR-II/2016]
- University Grant Commission (UGC), New Delhi [503/4/DRS-III/2016-(SAP-I)]
The effect of in-situ LaON surface passivation in between La2O3/ZrO2 bilayer high-k and N-2 plasma pre-treated 4H-SiC substrate formed by using plasma enhanced atomic layer deposition has been investigated. The similar to 40 nm and similar to 35 nm thicknesses of high-k bilayer stack with and without LaON on SiC substrate respectively were determined by cross sectional FESEM. The FTIR and XRD results reveal that, the deposition of the La2O3 and ZrO2 as well as the formation of silicate at interface was found on both samples. The presence of the LaON passivation layer in MOS device exhibits significantly improved interfacial and electrical properties in terms of lower density of interface traps (D-it), lower number of effective oxide charges per unit area (Q(eff)) and low leakage current density (J(V)). Furthermore, the high electric field 8.2 MV/cm without breakdown and dielectric constant of 8.03 was found for Al/La2O3/ZrO2/LaON/SiC as compared to that of Al/La2O3/ZrO2/SiC MOS device. The Fowler-Nordheim tunneling in both 4H-SiC MOS devices has been studied. The results reported here suggest that the Al/La2O3/ZrO2/LaON/SiC devices are useful for high power device applications.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据