Fabrication and characterization of inkjet-printed 2D perovskite optoelectronic devices

Two-dimensional (2D) halide perovskites have recently drawn significant interest due to their excellent optoelectronic and photoabsorption properties. Here, we present the large scale synthesis of solution-processed 2D (CH3(CH2)(3)NH3)(2)(CH3NH3)(n-1)PbnI3n+1 (n=2, 3, and 4) perovskites, a family of layered compounds with composition-tunable bandgap, where inkjet printing was used to fabricate heterostructure, flexible photodetector devices. The crystal structure for n=2, 3, and 4 perovskite was measured using optical absorption spectroscopy, which showed the peak absorption at 563.8, 601.4, and 609.4nm. The inkjet-printed photodetector devices (n=2) were photoresponsive to broadband incoming radiation in the visible regime, where the photoresponsivity was calculated to be R similar to 21 mA/W at a low light intensity of F similar to 0.6mW/cm(2). The flexible, inkjet-printed perovskite 2D heterostructures have significant potential for optoelectronic devices, which can enable broad possibilities with compositional tunability and versatility of the organohalide perovskites.