One step co-sintering of silicon carbide ceramic membrane with the aid of boron carbide

To reduce the sintering cycles and shorten the preparation periods of silicon carbide membrane, we report a fabrication route for silicon carbide membrane by co-sintering process with the aid of boron carbide. In this process, the SiC selective layer was coated on the SiCB4C green substrate with spray method followed by sintering at 1900 degrees C. With the increase of B4C content from 7 to 13 wt.%, the grain size and pore size of the substrate decreased, ascribing to the interface reaction between boron carbide and silica film on the silicon carbide surface. A straight and homogeneous selective layer formed on the substrate, presenting average thickness of 30 mu m and average pore size of 0.28 mu m. Thus, this technique is considered as a cost-effective and short-period method for the preparation of silicon carbide membrane.

Automated summary

The fabrication route for silicon carbide membrane using boron carbide assistance in co-sintering process results in a reduction of sintering cycles and shorter preparation periods, as well as the formation of a straight and homogeneous selective layer on the substrate.